トランジスタおよびダイオードのX線照射効果に関する研究

URI http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4216
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Title
トランジスタおよびダイオードのX線照射効果に関する研究
Title Alternative
Studies on the X-ray Irradiation Effects in Transistors and Diodes
Author
氏名 川畑 敬志
ヨミ カワバタ ケイシ
別名 Kawabata Keishi
氏名 向坂 正勝
ヨミ サキサカ マサカツ
別名 Sakisaka Masakatsu
氏名 法沢 恵造
ヨミ ノリサワ ケイゾウ
別名 Norisawa Keizo
Abstract

Characteristics of diodes and transistors by X-ray irradiation have been studied. The X-rays were obtaind by the 2MV Van de Graaff accelerator of Kyoto University using the brems-strahlung of 1.5MeV electrons upon gold target. The reverse current of 1S120 diodes increased gradually up to about 1X104 (rad (Si)) and steeply or rather steeply above this dose. The 70% recovery time was about 110 hours. The gain of 2SC183 transistors operated actively at constant emitter current, generally degraded more according to larger collector-base current. The radiation damage of 2SC476 transistors was found greater than that of 2SC183, both under passive operation. These facts would be attributed to the surface effect, that is, an increase of recombination velocity on the semiconductor surface.

Journal Title
広島工業大学研究紀要
Volume
6
Issue
1
Spage
83
Epage
87
Published Date
1971
Publisher
広島工業大学
ISSN
03851672
NCID
AN0021271X
Language
jpn
NIIType
Departmental Bulletin Paper
Text Version
出版社版
Old URI
Set
it-hiroshima