RF-DC 結合マグネトロンスパッタ法によるMo薄膜の作製

URI http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4227
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Title
RF-DC 結合マグネトロンスパッタ法によるMo薄膜の作製
Title Alternative
Preparation of Mo Thin Films by RF-DC coupled-Magnetron Sputtering
Author
氏名 嵜 義昭
ヨミ サキ ヨシアキ
別名 Saki Yoshiaki
氏名 田中 武
ヨミ タナカ タケシ
別名 Tanaka Takeshi
氏名 川畑 敬志
ヨミ カワバタ ケイシ
別名 Kawabata Keishi
Subject
RF- DC Coupled Magnetron Sputtering
Mo Thin Film
ESCA
Abstract

Discharge characteristics of RF-DC coupled-magnetron sputtering were investigated. It was found that target current depended on target-DC-bias voltage applied to target, rather than RF power. The deposition rate of Mo thin films deposited on thermal oxide silicon/Si (100) by the sputtering system can be controlled easily by target-DC bias voltage. Also investigated were the effects of deposition parameters such as the deposition rate and substrate temperature conditions on the resistivity of molybdenum films. An electrical resistivity as low as 6.9 μΩcm was obtained in molybdenum film by depositing at a substrate temperature of 450°C.

Journal Title
広島工業大学研究紀要
Volume
26
Spage
61
Epage
65
Published Date
1992
Publisher
広島工業大学
ISSN
03851672
NCID
AN0021271X
Language
jpn
NIIType
Departmental Bulletin Paper
Text Version
出版社版
Old URI
Set
it-hiroshima