Discharge characteristics of RF-DC coupled-magnetron sputtering were investigated. It was found that target current depended on target-DC-bias voltage applied to target, rather than RF power. The deposition rate of Mo thin films deposited on thermal oxide silicon/Si (100) by the sputtering system can be controlled easily by target-DC bias voltage. Also investigated were the effects of deposition parameters such as the deposition rate and substrate temperature conditions on the resistivity of molybdenum films. An electrical resistivity as low as 6.9 μΩcm was obtained in molybdenum film by depositing at a substrate temperature of 450°C.