RF-DC 結合マグネトロンスパッタ法によるMo薄膜の作製
URI | http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4227 | ||||||||||||||||||
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ファイル |
kenkyukiyo26061.pdf
( 197.0 KB )
公開日
:2009-08-17
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タイトル |
RF-DC 結合マグネトロンスパッタ法によるMo薄膜の作製
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別タイトル |
Preparation of Mo Thin Films by RF-DC coupled-Magnetron Sputtering
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著者 |
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キーワード |
RF- DC Coupled Magnetron Sputtering
Mo Thin Film
ESCA
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抄録 |
Discharge characteristics of RF-DC coupled-magnetron sputtering were investigated. It was found that target current depended on target-DC-bias voltage applied to target, rather than RF power. The deposition rate of Mo thin films deposited on thermal oxide silicon/Si (100) by the sputtering system can be controlled easily by target-DC bias voltage. Also investigated were the effects of deposition parameters such as the deposition rate and substrate temperature conditions on the resistivity of molybdenum films. An electrical resistivity as low as 6.9 μΩcm was obtained in molybdenum film by depositing at a substrate temperature of 450°C. |
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掲載雑誌名 |
広島工業大学研究紀要
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巻 |
26
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開始ページ |
61
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終了ページ |
65
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出版年月日 |
1992
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出版者 |
広島工業大学
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ISSN |
03851672
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NCID |
AN0021271X
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本文言語 |
日本語
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資料タイプ |
紀要論文
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著者版フラグ |
出版社版
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旧URI | |||||||||||||||||||
区分 |
it-hiroshima
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