Radiation effects to semiconductor devices is complex because of the numerous possible combinations of different types of radiation, irradiated and measured condition and semiconductor devices affected by radiation. In this paper, gain hfe and input impedance at f=270 Hz during high dose neutron irradiation by KUR were examined for the 2SB223 and 2SC31 type transistor. The gain degradiation for the 2SB223 PNP type transistor was greater than for the 2SC31 NPN type translstor. It was found that the 2SC31 type transistor was damaged by displacement effect in the base region and the 2SB223 type transistor was damaged by both of this displacement effect and surface effect.

1. 緒言　2. 実験装置および実験方法　3. 実験結果およびその検討　3.1 実験結果　3.2 結果の検討　4. 結言　参考文献