When a transistor is subjected to radiation exposure, a component of the five base current components for the NPN transistor increases in propotion to radiation fluence. In this paper the space-charge region recombination current varriation with neutron and 60Co gamma exposure is examined. These base current components are measuring as a function of base-emitter voltage. The results indicate that the characteristic curve (VBE-IB) at high injection shifts for neutron irradiation but not shift for γ-ray. It is also shown that a reciprocal slope term, n, does not vary with neutron fluence but tends to vary with γ-ray exposure at low injection.

1. まえがき　2. 実験方法　3. 実験結果　4. 結果の検討　5. あとがき　参考文献