半導体の放射線損傷に関する研究

URI http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4288
File
Title
半導体の放射線損傷に関する研究
Title Alternative
Studies on the Radiation Effects in Semiconductor Devices
Author
氏名 川畑 敬志
ヨミ カワバタ ケイシ
別名 Kawabata Keishi
Abstract

When a transistor is subjected to radiation exposure, a component of the five base current components for the NPN transistor increases in propotion to radiation fluence. In this paper the space-charge region recombination current varriation with neutron and 60Co gamma exposure is examined. These base current components are measuring as a function of base-emitter voltage. The results indicate that the characteristic curve (VBE-IB) at high injection shifts for neutron irradiation but not shift for γ-ray. It is also shown that a reciprocal slope term, n, does not vary with neutron fluence but tends to vary with γ-ray exposure at low injection.

Contents

1. まえがき 2. 実験方法 3. 実験結果 4. 結果の検討 5. あとがき 参考文献

Journal Title
広島工業大学研究紀要
Volume
6
Issue
2
Spage
115
Epage
119
Published Date
1972
Publisher
広島工業大学
ISSN
03851672
NCID
AN0021271X
Language
jpn
NIIType
Departmental Bulletin Paper
Text Version
出版社版
Old URI
Set
it-hiroshima