RF-DC 結合電源を用いたSnO2表面の水素プラズマ耐性改善

URI http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4294
File
Title
RF-DC 結合電源を用いたSnO2表面の水素プラズマ耐性改善
Title Alternative
Improvement of the Hydrogen Plasma Durability of SnO2 Surface by using RF-DC Coupled Power Supply
Author
氏名 田中 武
ヨミ タナカ タケシ
別名 Tanaka Takeshi
氏名 川畑 敬志
ヨミ カワバタ ケイシ
別名 Kawabata Keishi
Subject
SnO2
X-ray photoelectron spectroscopy
solar cel
hydrogen plasma exposure.
Abstract

R. F. power and d. c. bias were simultaneously applied to an electrode in a conventional plasma chemical vapor deposition (PCVD) system in order to suppress the reduction reaction of SnO2 induced by a hydrogen-containing plasma. It was found that the position of the positive column on the substrate was shifted to the rf electrode by increasing dc bias voltage. As a result, the reduction reaction of the SnO2 surface exposed to hydrogen plasma is dramatically suppressed.

Journal Title
広島工業大学研究紀要
Volume
29
Spage
29
Epage
33
Published Date
1995
Publisher
広島工業大学
ISSN
03851672
NCID
AN0021271X
Language
jpn
NIIType
Departmental Bulletin Paper
Text Version
出版社版
Old URI
Set
it-hiroshima