RF-DC 結合電源を用いたSnO2表面の水素プラズマ耐性改善
URI | http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4294 | ||||||||||||
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File |
kenkyukiyo29029.pdf
( 209.0 KB )
Open Date
:2009-08-17
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Title |
RF-DC 結合電源を用いたSnO2表面の水素プラズマ耐性改善
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Title Alternative |
Improvement of the Hydrogen Plasma Durability of SnO2 Surface by using RF-DC Coupled Power Supply
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Author |
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Subject |
SnO2
X-ray photoelectron spectroscopy
solar cel
hydrogen plasma exposure.
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Abstract |
R. F. power and d. c. bias were simultaneously applied to an electrode in a conventional plasma chemical vapor deposition (PCVD) system in order to suppress the reduction reaction of SnO2 induced by a hydrogen-containing plasma. It was found that the position of the positive column on the substrate was shifted to the rf electrode by increasing dc bias voltage. As a result, the reduction reaction of the SnO2 surface exposed to hydrogen plasma is dramatically suppressed. |
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Journal Title |
広島工業大学研究紀要
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Volume |
29
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Spage |
29
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Epage |
33
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Published Date |
1995
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Publisher |
広島工業大学
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ISSN |
03851672
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NCID |
AN0021271X
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Language |
jpn
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NIIType |
Departmental Bulletin Paper
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Text Version |
出版社版
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Old URI | |||||||||||||
Set |
it-hiroshima
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