半導体の放射線損傷について〔Ⅱ〕
URI | http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/4323 | ||||||||||||
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ファイル |
kenkyukiyo0401237.pdf
( 335.0 KB )
公開日
:2009-08-17
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タイトル |
半導体の放射線損傷について〔Ⅱ〕
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別タイトル |
On the radiation damage Semiconductor divices
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著者 |
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抄録 |
Recently semiconductor divices have been applied to electric equipments in a radiation environment. The electric proparties of semiconductor devices are known to be sensitive to the lattic deffects produced by irradiation of radiation ray. The effects of thermal neutron radiation damage in various transistors on the market measured about VCE-IC, VCB-IC characteristics and h-parameters. In this paper, the effects of radiation on high frequency transistors and low frequency transistors will be discussed, and results will show that high frequency type transistors are more resistant to radiation damage than low frequency type transistors. |
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掲載雑誌名 |
広島工業大学研究紀要
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巻 |
4
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号 |
1
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開始ページ |
237
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終了ページ |
247
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出版年月日 |
1970
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出版者 |
広島工業大学
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ISSN |
03851672
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NCID |
AN0021271X
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本文言語 |
日本語
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資料タイプ |
紀要論文
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著者版フラグ |
出版社版
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旧URI | |||||||||||||
区分 |
it-hiroshima
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