Temperature Dependence of Photoconductivity and Self-Trapping of Holes in a-Si:H

URI http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/7148
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Title
Temperature Dependence of Photoconductivity and Self-Trapping of Holes in a-Si:H
Author
氏名 森垣 和夫
ヨミ モリガキ カズオ
別名 Morigaki Kazuo
氏名 八木 啓次郎
ヨミ ヤギ ケイジロウ
別名 Yagi Keijiro
氏名 山口 政晃
ヨミ ヤマグチ マサアキ
別名 Yamaguchi Masaaki
Subject
amorphous silicon
photoconductivity
NDC
549.8
Abstract

We have investigated the temperature dependence of the photoconductivity in a-Si: H. The activated photoconduction observed in the range of 50-200 K is accounted for in terms of self-trapping of holes. The observed values of activation energy agree with those predicted from this model.

Journal Title
広島工業大学研究紀要
Volume
32
Spage
9
Epage
15
Published Date
Feb-98
Publisher
広島工業大学
ISSN
3851672
NCID
AN0021271X
Language
eng
NIIType
Departmental Bulletin Paper
Text Version
出版社版
Relation URL
Old URI
Set
it-hiroshima