Electronic density of states of CxY(Y=S,Se,Te)with a NiAs-type structure are obtained from resonant photoemission and resonant inverse-photoemission spectroscopies measurements in the regions of the valence band maximum (VBM) and conduction band minimum (CBM). The Cr 3d(t2g) exchange splitting energies of CrxS,CrxSe and CrxTe are determined to be 3.5, 3.5 and 3.8 eV, respectively. It is worthwhile to notice that a Cr 3d(t2g) exchange splitting energy becomes larger as chalcogen changes from S to Se and further to Te. This tendency is similar to the exchange splitting energies calculated by Dijkstra et al.. Cr 3d main peaks locate at almost same positions whether Cr vacancies exit or not in the Cr chalcogenides. Therefore, it seems that Cr vacancies do not affect strongly on the electronic structures of the compounds.